通过测量基频光波长为1.064 μm时几个不同掺杂类型和掺杂浓度的Si(100)(2×1)样品表面反射二次谐波强度随温度的变化关系,说明在此波长上二次谐波不是来源于表面耗尽场的影响,而是来源于表面态电子。Si(100)(2×1)表面反射二次谐波强度反比于温度的平方。本文提出了一个简单模型,给出了初步解释。

By measuring the temperature dependences of second harmonic intensity from several (2×1 ) reconstructed St (100) samples with different doping materials and doping concentrations at the foundmental wavelength of 1064 um, we have revealed that the reflected second harmonic signals at this fundamental wavelength is induced by electrons in surface states, not by surface depletion electric field. The intensity of reflected SH signals was inversely proportional to the square of the sample temperature.