Chinese Journal of Lasers B, 1995, 4 (6): 557, 网络出版: 2007-08-17
High Energy He+ Ion Implantation in Titanium Doped Sapphire Crystal
High Energy He+ Ion Implantation in Titanium Doped Sapphire Crystal
摘要
Abstract
The 2 MeV energy He+ ion implantation for constructing planar optical waveguide in tunable laser crystal Ti:Al2O3 was performed. Lattice damage by ion bombardment was investigated by means of optical and SEM studies, different damage depths of about 5 μm and 10 μm for Al-sublattice and O-sublattice of the Ti:Al2O3 substrate were obtained by electron probe microanalysis (EPMA).
LIU Jianhua, ZHANG Qiang, DENG Peizhen, GAN Fuxi. High Energy He+ Ion Implantation in Titanium Doped Sapphire Crystal[J]. Chinese Journal of Lasers B, 1995, 4(6): 557. LIU Jianhua, ZHANG Qiang, DENG Peizhen, GAN Fuxi. High Energy He+ Ion Implantation in Titanium Doped Sapphire Crystal[J]. 中国激光(英文版), 1995, 4(6): 557.
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