Chinese Journal of Lasers B, 1992, 1 (3): 193, 网络出版: 2007-09-11
Experimental study of actively mode-locked semiconductor laser with grating external cavity
Experimental study of actively mode-locked semiconductor laser with grating external cavity
摘要
Abstract
In this paper,complete mode-locking optical pulses have been obtained froman actively mode-locked GaAs/GaAlAs semiconductor laser with grating external cavity.Theshortest optical pulse is 7.3 ps measured by second harmonic generation(SHG)autocorrelator.The repetition rate is 995.12 MHz and the central wavelength is 798.4 nm.The effect ofmodulation frequency,modulation current,and bias current on the optical pulses width areinvestigated.
Xianhua Wang, Guofu Chen, Dongfeng Liu, Lin Xiu, Shuangchen Ruan. Experimental study of actively mode-locked semiconductor laser with grating external cavity[J]. Chinese Journal of Lasers B, 1992, 1(3): 193. Xianhua Wang, Guofu Chen, Dongfeng Liu, Lin Xiu, Shuangchen Ruan. Experimental study of actively mode-locked semiconductor laser with grating external cavity[J]. 中国激光(英文版), 1992, 1(3): 193.
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