利用石英闭管法对金属有机化学气相沉积(MOCVD)外延生长的应变量子阱(MQW)650 nm AlGaInP/GaInP材料进行选择区域扩Zn,使扩Zn区域的光致发光(PL)谱的峰值蓝移达175 meV,形成对650 nm波长激光器的高透腔面,有益于减少激光器腔面光吸收,增加了激光器退化的光学灾变损伤(COD)阈值。后工艺制作出条宽100 μm,腔长1 mm的增益导引激光器,实现了红光半导体激光器的大功率输出。激光器阈值电流为382 mA,在2.28 A工作电流时达到光学灾变损伤阈值,最大连续输出光功率1.55 W,外微分量子效率达到0.82 W/A。

Zn-diffused high power 650 nm AlGaInP/GaInP material with compressively strained multi-quantum-well (MQW) active layer was fabricated. The zinc diffusion was used on the material facet in a sealed quartz tube. Photoluminescence (PL) spectra shows 175 meV blue-shift in the Zn diffusion area, which is transparent for 650 nm laser emission. It can greatly reduce the light absorption at the laser facet and increase the threshold of catastrophic optical damage (COD). At last, a gain-induced semiconductor laser with 100 μm tripe width and 1mm cavity length 650 nm was fabricated, and the high power output for red semiconductor laser was realized. The maximum output power reaches up to 1.55 W at 2.28 A operation current. Threshold current and slope efficiency are 382 mA and 0.82 W/A, respectively.