通过飞秒脉冲激光(50 fs,800 nm,1 kHz,2 mJ)沉积技术在n型Si(100)单晶基片上制备了ZnO薄膜。详细研究了基片温度变化以及退火处理对ZnO薄膜的结构、表面形貌及光学性质的影响。X射线衍射(XRD)结果表明,不同温度下(20～350 ℃)生长的ZnO薄膜具有纤锌矿结构,并且呈c轴择优取向;当基片温度为80 ℃时,薄膜沿(002)晶面高度择优生长;当基片温度为500 ℃时薄膜沿(103)晶面择优生长,场发射扫描电子显微镜(FEEM)结果表明薄膜呈纳米晶结构,并观察到了ZnO的六方结构。进一步通过透射光谱的测量讨论了基片温度及退火处理对ZnO薄膜光学透射率的影响,结果表明退火后薄膜的透射率增大。

Zinc oxide films were prepared on n type Si(100) substrate using femtosecond laser deposition with laser parameters as follows: pulse width 50 fs, wavelength 800 nm, repeat frequency 1 kHz, and pulse energy 2 mJ. The effects of substrate temperature change and annealing on the structure, surface morphology and optical properties of the ZnO films were discussed. The X-ray diffraction (XRD) results showed the ZnO films deposited under different temperature (20～350 ℃) were with wurtzite structure and highly c-axis oriented. When the substrate silicon was 80 ℃ the film was highly (002)-oriented, and (103)-oriented at 500 ℃. The nano-crystal structure of the films and hexagonal structure of ZnO were observed with a field-emission electron microscope (FEEM). The effects of substrate temperature and annealing on the optical transmissivity of ZnO films were discussed by transmitted spectra, and the transmissivity was increased after annealing.