光学学报, 1991, 11 (1): 71, 网络出版: 2007-11-12
自集成透镜InGaAsP/InPDHLED及其离子束铣技术
A novel integral lensed InGaAsP/InP DH LED and ion-beam milling technigue
摘要
本文报道在国内首次采用离子束铣技术研制自集成透镜InGaAsP/InP DH LED的实验结果。采用烘烤正性光致抗蚀剂来形成球状掩膜适合于离子束铣,且重复性很好。为了获得光洁的刻蚀表面,刻蚀条件均已最优化。
Abstract
We report the results of fabrication of integral lensed GaInAsP LED by using ion-beam milling technigue firstty in China. Baking a positive acting photoresist layer was found to facilitate a very reproducible method of forming a spherical mask suitable for ion-beam milling. Characteristics of Ar ion-beam milling of InP and mask was studied, and milling parameters are optimized for obtaining optically smooth etched surfaces.
肖德元, 郭康瑾, 付新定, 徐少华, 方红丽, 张坚萍, 陈启玙, 陈瑞璋. 自集成透镜InGaAsP/InPDHLED及其离子束铣技术[J]. 光学学报, 1991, 11(1): 71. 肖德元, 郭康瑾, 付新定, 徐少华, 方红丽, 张坚萍, 陈启玙, 陈瑞璋. A novel integral lensed InGaAsP/InP DH LED and ion-beam milling technigue[J]. Acta Optica Sinica, 1991, 11(1): 71.
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