Chinese Optics Letters, 2007, 5 (12): 727, Published Online: Dec. 12, 2007
Laser-induced damage threshold in n-on-1 regime of Ta2O5 films at 532, 800, and 1064 nm Download: 645次
Ta2O5膜 激光损伤阈值 吸收 退火 310.6860 Thin films, optical properties 140.3330 Laser damage 160.3380 Laser materials
Abstract
Ta2O5 films were prepared with conventional electron beam evaporation and annealed in O2 at 673 K for 12 h. Laser-induced damage thresholds (LIDTs) of the films were performed at 532 and 1064 nm in 1-on-1 regime firstly, and then were performed at 532, 800, and 1064 nm in n-on-1 regime, respectively. The results showed that the LIDTs in n-on-1 regime were higher than that in 1-on-1 regime at 532 and 1064 nm. In addition, in n-on-1 regime, the LIDT increased with the increase of wavelength. Furthermore, both the optical property and LIDT of Ta2O5 films were influenced by annealing in O2.
Cheng Xu, Jianke Yao, Jianyong Ma, Yunxia Jin, Jianda Shao. Laser-induced damage threshold in n-on-1 regime of Ta2O5 films at 532, 800, and 1064 nm[J]. Chinese Optics Letters, 2007, 5(12): 727.