激光与光电子学进展, 2014, 51 (8): 080401, 网络出版: 2014-07-30
二相驱动帧转移型CCD电荷溢出现象分析及解决方法 下载: 560次
Analysis and Solution of Two-Phase FT-CCD Charge Overflow Phenomenon
光电子学 电荷溢出 成像控制 积分球实验 optoelectronics CCD CCD charge overflow imaging control integrating sphere tests
摘要
CCD接收到过强信号时会出现电荷溢出现象,对于无溢出漏级结构的CCD,需合理设置成像系统参数避免出现电荷溢出。针对滨松帧转移型CCD 对非强目标成像时出现的电荷溢出现象,分析其原因是由行读出过程中成像区长时间电荷积累而导致的,通过积分之前的多次帧转移,有效解决了电荷溢出问题,并基于积分球实验进一步论证了原因及解决方法。
Abstract
Charge overflow phenomenon will arise when CCD is receiving strong signals. With CCD without overflow drains, the parameters of the imaging system have to be set properly to avoid charge overflow. Based on the charge overflow phenomenon when using HAMAMATSU Frame-Transfer CCD to image not so strong targets, according to the paper, it is caused by the long-time charge accumulation of the image section during line readout process. To remove the overflow signal effectively, multiple frame transfers are carried out before integration time. Integrating sphere tests are also performed to testify the reason and the solution.
刘懿, 周青, 尹达一. 二相驱动帧转移型CCD电荷溢出现象分析及解决方法[J]. 激光与光电子学进展, 2014, 51(8): 080401. Liu Yi, Zhou Qing, Yin Dayi. Analysis and Solution of Two-Phase FT-CCD Charge Overflow Phenomenon[J]. Laser & Optoelectronics Progress, 2014, 51(8): 080401.