采用熔体提拉法生长出了高质量的a轴和c轴GdVO4单晶。测量了GdVO4晶体的室温透过光谱, 结果表明GdVO4晶体的短波透过截止边为338 nm, 长波透过截止边大于3000 nm, 透过范围覆盖紫外、可见、近红外和部分中红外波段, 因此可以在较宽波长范围内实现拉曼激光频移。研究了GdVO4晶体在532 nm和355 nm皮秒激光脉冲抽运下的受激拉曼散射(SRS)。采用腔外单次通过方式, 获得了3级斯托克斯线(557.98 nm,586.86 nm,618.92 nm)和1级反斯托克斯线(508.01 nm), 得到GdVO4晶体一级斯托克斯拉曼散射的稳态增益系数为26.6±0.2 cm/GW, 二级斯托克斯拉曼散射的稳态增益系数为14.0±0.2 cm/GW, 受激拉曼散射的整体转换效率达到43%。报道了GdVO4晶体355 nm激发的受激拉曼散射, 观察到2级斯托克斯谱线(365.9 nm,378.1 nm), 在此条件下测得一级斯托克斯谱线的拉曼增益高达114±9 cm/GW。

By Czochralski method, high quality GdVO4 single crystals were grown out along a-axis and c-axis. The transmission spectrum of GdVO4 crystal was measured at room temperature. The ultra-violet cut-edge is 338 nm and the infrared cut-edge is larger than 3000 nm, so the transmission spectrum of GdVO4 crystal could cover the region from ultra-violet to part of mid- infrared, and it indicats that GdVO4 crystal could be used for Raman frequency shifting in a wide wavelength scope. The stimulated Raman scattering (SRS) excited by 532 nm and 355 nm pico-second pulses was investigated in GdVO4 crystal. With an ultra-cavity single-pass configuration, three Stokes lines (557.98 nm, 586.86 nm, 618.92 nm) and one anti-Stokes lines (508.01 nm) were observed. The steady-state Raman gain coefficient for the first Stokes line was calculated to be 26.6±0.2 cm/GW, the gain coefficient for the second Stokes line was calculated to be 14.0±0.2 cm/GW, and the total Raman conversion efficiency reached to 43%. For GdVO4 crystal, the SRS of 355 nm laser was reported. Two Stokes lines (365.9 nm, 378.1 nm) were observed, and in this condition the steady-state Raman gain coefficient for the first Stokes line was measured as high as 114±9 cm/GW.