Chinese Optics Letters, 2008, 6 (3): 03225, Published Online: Mar. 27, 2008
Annealing effects on residual stress of HfO2/SiO2 multilayers Download: 649次
退火 HfO2/SiO2多层膜 残余应力 230.1360 Beam splitters 220.0220 Optical design and fabrication 310.6860 Thin films, optical properties
Abstract
HfO2/SiO2 multilayer films were deposited on BK7 glass substrates by electron beam evaporation method. The effects of annealing at the temperature between 200 and 400 centigrade on residual stresses have been studied. It is found that the residual stress of as-deposited HfO2/SiO2 multilayers is compressive. It becomes tensile after annealing at 200 centigrade, and then the value of tensile stress increases as annealing temperature increases. And cracks appear in the film because tensile stress is too large when the sample is annealed at 400 centigrade. At the same time, the crystallite size increases and interplanar distance decreases with the increase of annealing temperature. The variation of residual stresses is corresponding with the evolution of structures.
Yanming Shen, Zhaoxia Han, Jianda Shao, Shuying Shao, Hongbo He. Annealing effects on residual stress of HfO2/SiO2 multilayers[J]. Chinese Optics Letters, 2008, 6(3): 03225.