激光与光电子学进展, 2008, 45 (4): 15, 网络出版: 2008-04-21
无机相变信息存储材料研究新进展 下载: 1294次
New Progresses in Inorganic Phase-Change Materials for Information Storage
摘要
硫族化合物合金GeSbTe(GST)和AgInSbTe等相变材料(PCM)已经在光存储技术中得到广泛的应用,用相变电存储器件作为闪存的替代产品已成为国内外研究的热点。与此同时,相变材料在一些领域也取得了新的应用。总结了近年来国内外在相变材料的存储机制、光/电存储性能的改进以及新应用等方面的最新研究成果,并展望了相变材料的研究前景。
Abstract
Phase-change chalcogenide alloys GeSbTe and AgInSbTe have been successfully used in rewritable optical discs, and researches in the phase change memory(PCM) device as substitute for flash memory is becoming a hotspot in the field of information storage. Also, new applications of phase-change materials have been developed in the related areas. Latest experimental and theoretical results on the mechanism and improvement in the optical / electrical storage properties, as well as some new applications of phase-change materials are reviewed, and their development trend is prospected.
孙华军, 侯立松, 魏劲松, 吴谊群. 无机相变信息存储材料研究新进展[J]. 激光与光电子学进展, 2008, 45(4): 15. Sun Huajun, Hou Lisong, Wei Jingsong, Wu Yiqun. New Progresses in Inorganic Phase-Change Materials for Information Storage[J]. Laser & Optoelectronics Progress, 2008, 45(4): 15.