中国激光, 2008, 35 (s1): 9, 网络出版: 2008-04-21   

低压驱动复合腔电光调Q微晶片激光器

Low Voltage Driving Coupled-Cavity Electro-Optically Q-Switched Microchip Lasers
作者单位
清华大学精密仪器与机械学系, 北京 100084
摘要
复合腔电光调Q微晶片激光器是一种集成化的固体激光器,具有体积小、基横模、单纵模、线偏振运转,输出脉冲重复频率高,脉宽窄的优点,是高重复频率、高光束质量的主振荡功率放大器(MOPA)激光系统的理想种子源。进行了低压驱动复合腔电光调Q微晶片激光器的实验与理论研究。根据理论分析,增加电光晶体长度和提高端面反射率可减小标准具透射谱半宽度,进而降低驱动电压。设计了两套激光器实验方案。实验中激光增益介质和电光晶体分别选用Nd:YVO4和LiTaO3,谐振腔尺寸小于3 mm×3 mm×2.5 mm。方案1主要研究增加电光晶体长度后的激光器输出特性,在抽运功率184 mW,240 V驱动电压下,可实现300 kHz激光脉冲输出,脉冲宽度10 ns,峰值功率9.4 W。在方案2中,通过进一步提高端面反射率,在短时间内可输出1 MHz脉冲。
Abstract
Coupled-cavity electro-optically Q-switched microchip lasers are integrated solid-state lasers with advantages of small size, fundamental transverse mode, single longitudinal mode, linear polarization, high repetition rate, and short pulse duration. They are ideal seed sources for high repetition rate, high beam quality MOPA systems. Experimental and theoretical study of the lasers is demonstrated. From theoretical analysis, long electric material and high end-face reflectivity lead to narrow Fabry-Pérot etalon transmission bandwidth, and low driving voltage. Two experimental setups are designed for low voltage driving. The gain medium and the electric material are Nd:YVO4 and LiTaO3, respectively. The cavity size is smaller than 3 mm×3 mm×2.5 mm. In the first setup, the output characteristics are studied through changing the length of electric material. Pulse repetition rates as high as 300 kHz is achieved with 184 mW pump power and 240 V driving voltage. The pulse width and peak power are 10 ns and 9.4 W, respectively. In the second setup, 1 MHz pulse rate is achieved in a short time period, by increasing the end-face reflectivity.

王云祥, 黄磊, 巩马理, 张海涛. 低压驱动复合腔电光调Q微晶片激光器[J]. 中国激光, 2008, 35(s1): 9. Wang Yunxiang, Huang Lei, Gong Mali, Zhang Haitao. Low Voltage Driving Coupled-Cavity Electro-Optically Q-Switched Microchip Lasers[J]. Chinese Journal of Lasers, 2008, 35(s1): 9.

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