Chinese Optics Letters, 2008, 6 (4): 268, Published Online: Apr. 21, 2008
810-nm InGaAlAs/AlGaAs double quantum well semiconductor lasers with asymmetric waveguide structures 
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非对称波导 半导体激光器 转换效率 140.5960 Semiconductor lasers 230.5590 Quantum-well, -wire and -dot devices 310.1860 Deposition and fabrication
Abstract
The 810-nm InGaAlAs/AlGaAs double quantum well (QW) semiconductor lasers with asymmetric waveguide structures, grown by molecular beam epitaxy, show high quantum efficiency and high-power conversion efficiency at continuous-wave (CW) power output. The threshold current density and slope efficiency of the device are 180 A/cm2 and 1.3 W/A, respectively. The internal loss and the internal quantum efficiency are 1.7 cm2 and 93%, respectively. The 70% maximum power conversion efficiency is achieved with narrow far-field patterns.
Lin Li, Guojun Liu, Zhanguo Li, Xiaohua Wang. 810-nm InGaAlAs/AlGaAs double quantum well semiconductor lasers with asymmetric waveguide structures[J]. Chinese Optics Letters, 2008, 6(4): 268.
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