Chinese Optics Letters, 2008, 6 (6): 443, Published Online: Jun. 10, 2008
Extremely low density self-assembled InAs/GaAs quantum dots 
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InAs量子点 低密度 光荧光谱 310.1860 Deposition and fabrication 250.5230 Photoluminescence 120.6660 Surface measurements, roughness
Abstract
The self-assembled InAs/GaAs quantum dots (QDs) with extremely low density of 8\time10^(6) cm^(-2) are achieved using higher growth temperature and lower InAs coverage by low-pressure metal-organic chemical vapour deposition (MOVCD). As a result of micro-photoluminescence (micro-PL), for extremely low density of 8\time10^(6) cm^(-2) InAs QDs in the micro-PL measurements at 10 K, only one emission peak has been achieved. It is believed that the InAs QDs have a good potential to realize single photon sources.
Lin Li, Guojun Liu, Zhanguo Li, Mei Li, Xiaohua Wang. Extremely low density self-assembled InAs/GaAs quantum dots[J]. Chinese Optics Letters, 2008, 6(6): 443.
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