采用有效质量模型下的4×4 Luttinger-Kohn哈密顿量矩阵对In0.53Ga0.39Al0.08As/InxGa1-xAs0.9Sb0.1量子阱结构的能带进行了计算。求得了C1-HH1跃迁波长随In组分及阱宽的变化关系,并采用力学平衡模型计算了此应变材料体系在生长时的临界厚度。结果表明,在结构设计和材料生长中采用合适的材料组分和阱宽,在InP基InGaAlAs/InGaAsSb应变量子阱激光器中能够实现1.6～2.5 μm近中红外波段的激射波长。

In0.53Ga0.39Al0.08As/InxGa1-xAs0.9Sb0.1 quantum well band structure has been calculated with the effective-mass model and 4×4 Luttinger-Kohn Hamiltonian matrix method. The relations of C1-HH1 transition wavelength versus In composition and well width have been obtained and discussed. Mechanical equilibrium model has been used to calculate the critical thickness for the strain material system. It is concluded that by appropriate structure design and adjustment of composition and quantum well parameters, the InP based InGaAlAs/InGaAsSb strained laser system can readily realize laser radiation in the wavelength range of 1.6～2.5 μm.