激光与光电子学进展, 2008, 45 (8): 40, 网络出版: 2008-08-16
p型ZnO薄膜制备和掺杂的研究进展
Research Progress on Deposition and Doping Techniques of p-Type ZnO Thin Films
光学材料 ZnO薄膜 制备方法 p型掺杂 p-n结 optical material ZnO thin film deposition technique p-type doping p-n node
摘要
ZnO作为第三代半导体功能材料，一直受到国内外的广泛关注。高质量的p型掺杂是基于光电器件应用的关键。综述了获得p型ZnO薄膜的制备方法和掺杂技术的研究进展，讨论了目前生长高质量的p型ZnO薄膜存在的困难，并对不同方法制备的p型ZnO薄膜的特点进行了比较分析。
Abstract
ZnO is the third generation semiconductor functional material， and has attracted much attention at home and abroad. High quality p-type doping is the key to develop optoelectronic devices. The progress of deposition and doping techniques for p-type ZnO thin films was summarized， and the difficulty of growing high quality p-type ZnO thin films was discussed. The characteristics of p-type ZnO thin films fabricated by different methods were compared.
单晶, 谭天亚, 崔春阳, 江雪, 陈俊杰. p型ZnO薄膜制备和掺杂的研究进展[J]. 激光与光电子学进展, 2008, 45(8): 40. Shan Jing, Tan Tianya, Cui Chunyang, Jiang Xue, Chen Junjie. Research Progress on Deposition and Doping Techniques of p-Type ZnO Thin Films[J]. Laser & Optoelectronics Progress, 2008, 45(8): 40.
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