强激光与粒子束, 2008, 20 (1): 0171, 网络出版: 2010-05-27
光导开关研究进展及其在脉冲功率技术中的应用
Developments and applications of photoconductive semiconductor switches in pulsed power technology
光导开关 砷化镓 碳化硅 脉冲功率 超宽带源 紧凑型脉冲功率系统 Photoconductive semiconductor switch GaAs SiC Pulsed power Ultra-wide band (UWB) Compactpulsed power system
摘要
概述了GaAs光导开关的发展历史，通过对GaAs和SiC进行比较指出，SiC由于禁带宽度大、击穿场强高、电子饱和漂移速度大、热导率高等优势被认为是更好的光导开关材料。比较了本征光电导和非本征光电导的不同之处，报道了利用本征光电导和非本征光电导的SiC光导开关的最新进展。介绍了光导开关在超宽带源和紧凑型脉冲功率系统中的应用，提出了SiC光导开关进一步发展的关键技术并进行了展望。
Abstract
Photoconductive semiconductor switches (PCSS) have been used in pulsed power technology due to their advantages over conventional switches,such as fast rise time,negligible time jitter,and optical electrical isolation. History and developments of GaAs PCSS are summarized. SiC with wide band gap,high breakdown field,high saturation electron drift velocity and high thermal conductivity is considered as a promising semiconductor for PCSS. Status and latest progress of SiC PCSS employing intrinsic and extrinsic photoconductivity are reported. Applications of PCSS in ultra-wide band and compact pulsed power system are briefly introduced. The critical technological problems to be investigated in future are presented.
袁建强, 谢卫平, 周良骥, 陈林, 王新新. 光导开关研究进展及其在脉冲功率技术中的应用[J]. 强激光与粒子束, 2008, 20(1): 0171. YUAN Jian-qiang, XIE Wei-ping, ZHOU Liang-ji, CHEN Lin, WANG Xin-xin. Developments and applications of photoconductive semiconductor switches in pulsed power technology[J]. High Power Laser and Particle Beams, 2008, 20(1): 0171.
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