为了研究微机电可调谐垂直腔半导体光放大器在反射模式下的增益及波长调谐特性，不同于以往的耦合腔方法，采用传输矩阵方法进行了研究。该方法避免了对有效腔长及增益增强因子的计算过程，所得结果直接与器件的物理结构相对应。得到了空腔长度、有源区量子阱堆位置的改变对增益及峰值波长的影响。结果表明，利用该方法模拟计算的结果与实验的结果相吻合。

In order to study the gain and wavelength tunable property of MEMS-based tunable vertical cavity semiconductor optical amplifiers at reflection mode,transfer matrix method was used. Unlike the previous coupling cavity method,the transfer matrix method avoids calculating the effective cavity length and gain-enhancement factor and its calculated result is corresponded directly with the physical structure of the device. The change of the gain and peak wavelength depending on the shift of empty cavity length and the variation of position of the quantum well stacks were obtained,and the calculation result was agreement with the experiment.