用磁控溅射法制备六角氮化硼薄膜, 在衬底温度、衬底偏压、工作气压等条件一定的情况下改变工作气体(氮气+氩气)中氮气的比例, 以制备高质量的六角氮化硼薄膜, 薄膜以红外吸收光谱标识。实验结果表明, 工作气体中氮气的比例对制得的六角氮化硼薄膜有很大影响, 在氮气比例为20%时得到理想的六角氮化硼薄膜。

Boron nitride thin films were deposited by RF magnetron sputtering. The content of N2 in working gas (N2/N2+Ar) was changed and that substrate temperature, substrate bias, working gas pressure and as well other conditions were definite. The Boron nitride films were characterized by IR Spectra. The research shows that the content of N2 in working gas was an important factor that affected the quality of Boron Nitride films. Hexagonal boron nitride films with high quality were deposited at 20% of the content of N2 in working gas.