建立了不同结构的InP基PIN型In0.53Ga0.47As探测器光响应的物理模型.通过引入收集效率函数,模拟计算了探测器量子效率和光响应.采用该模型分别研究了正面进光和背面进光情况下典型的In0.53Ga0.047As/InP PIN探测器的结构参数对器件量子效率的影响.在此基础上提出了两种改进的背照射InGaAs/InP探测器结构,并讨论了其结构参数的优化.

A modified physical model on the optical response of InP-based In0.53Ga0.47As PIN photodetectors was presented. By introducing a collecting factor, the optical response and quantum efficiency were simulated. The influences of device parameters on quantum efficiency of typical In0.53Ga0.47As/InP PIN photodetectors under both front and backside illuminated conditions were investigated by using our model. Furthermore, two modified InGaAs/InP PD structures for back-illumination were proposed, and the optimal structural parameters were discussed.