中国激光, 2008, 35 (9): 1323, 网络出版: 2008-09-09
60%电光效率高功率激光二极管阵列
High Power Laser Diode Array with 60% Electro-Optical Efficiency
半导体激光器 电光效率 InGaAs/GaAsP量子阱 大光腔 semiconductor lasers electro-optical conversion efficiency InGaAs/GaAsP quantum well large optical-cavity
摘要
设计并制备了980 nm高量子效率和极低光损耗的激光二极管(LD)外延材料和器件。微通道封装1 cm激光二极管阵列在连续(CW)工作条件下最大电光效率达到60.0%,相应的斜率效率和输出光功率分别为1.1 W/A和38.2 W。测试得到外延材料的内损耗系数和内量子效率分别为0.58 cm-1和91.6%。测试分析表明,器件电光效率的提高主要在于新型的InGaAs/GaAsP应变补偿量子阱和大光腔结构设计。
Abstract
The epitaxy material and device for high quantum efficiency and small optical loss 980 nm laser diode (LD) were designed and fabricated. The maximal electro-optical conversion efficiency of the standard 1cm laser bar with micro-channel cooler is 60.0% under continuous-wave (CW) working condition, the corresponding slope efficiency and output power are 1.1 W/A and 38.2 W, respectively. The measured internal loss coefficient and internal quantum efficiency are 0.58 cm-1 and 91.6%, respectively. The result shows that the improvement of electro-optical conversion efficiency is due to new InGaAs/GaAsP strain-compensated quantum well and the large optical-cavity waveguide structure.
王俊, 白一鸣, 崇锋, 刘媛媛, 冯小明, 王勇刚, 张广泽, 刘素平, 马骁宇. 60%电光效率高功率激光二极管阵列[J]. 中国激光, 2008, 35(9): 1323. Wang Jun, Bai Yiming, Chong Feng, Liu Yuanyuan, Feng Xiaoming, Wang Yonggang, Zhang Guangze, Liu Suping, Ma Xiaoyu. High Power Laser Diode Array with 60% Electro-Optical Efficiency[J]. Chinese Journal of Lasers, 2008, 35(9): 1323.
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