研究了多晶硅片扩散工艺与激光掺杂工艺的匹配性.采用波长532 nm的纳秒脉冲激光器对扩散后未去磷硅玻璃的多晶硅片表面进行激光扫描掺杂，激光扫描掺杂后硅片方块电阻降低为扩散后硅片方阻的50%左右，而且随着激光功率的增加，扩散到硅片表面的磷原子浓度增大，硅片方阻下降更明显.测试了激光掺杂后多晶硅太阳能电池的外量子效率，其外量子效率在340～480 nm波段范围与常规多晶硅太阳能电池相比提高18%～5%.研究了激光掺杂后多晶硅电池的光电转换特性，分析了较高激光功率掺杂时多晶硅电池的失效特性，结果表明：优化工艺后多晶硅太阳电池平均光电转换效率达到17.11%，比普通工艺多晶硅太阳电池提高0.34%，最高转换效率达到17.47%.激光掺杂选择性发射极工艺流程简单，电池效率提升明显，易于实现产业化.

The matching property of polycrystalline wafers phosphorus diffusion and laser doping process was studied. Nanosecond pulsed laser with a wavelength of 532 nm was used to conduct laser scanning doping on polycrystalline wafers which remains phosphorosilicate glass after diffusion. The sheet resistance decreases about 50%, and with the increasing of laser power, more phosphorus atoms diffuse to polycrystalline silicon, and the sheet resistance decreases more significantly. The external quantum efficiency of the conventional solar cells and laserdoped solar cells was tested, and for the band of 340~480 nm, the EQE of laserdoped cells increased by 18% to 5% compared to the conventional solar cells. The photoelectric conversion characteristics of laserdoped polycrystalline silicon cells were studied, and the failure characteristics under high laser power were analyzed. With the using of optimization of laser doping polycrystalline silicon solar cell process technology, the average photoelectric conversion efficiency of solar cells achieves 17.11%, which is 0.34% higher than that of the conventional cells. The highest efficiency achieves 17.47%. Laser doping process is simple, and conversion efficiency increases significantly, so this process makes it easy to realize industrialization.