为了得到温度对高斯光束在耗散晶体中的孤子波演化的影响结果，基于温度对暗辐射强度和扩散场的影响，提出了双光束耦合强度和相位耦合系数的新模型，采用数值模拟的方法研究了高斯光束在双光束耦合光折变耗散系统中不同温度下的演化特性。结果表明，晶体的温度与高斯光束的稳定性密切相关。对于给定的耗散系统，若该系统能支持某一特定的全息屏蔽明孤子，可以找到与之匹配的高斯光束。在300～350 K温度范围内，高斯光束能在晶体中传播足够远的距离；而当晶体温度变化足够大时，高斯光束强度随传播距离增加而减小，入射的高斯光束不能以稳定的全息孤子态传播。

In order to obtain the effect of temperature on solitary evolution of Gaussian beam in dissipative crystals, a new model of the intensity and phase-coupling coefficients in two-wave miximg is proposed. The dynamical evolution of Gaussian beam in dissipative crystal with photorefractive two-wave mixing at different temperatures are numerically investigated. The results show that the stability of Gaussian beam in such a system depends strongly on the crystal temperature.For a given dissipative system that supports a determinate dissipative screening soliton, one can find a corresponding Gaussian beam which matches with the system parameters.The Gaussina beam at 300～350 K can propagate stably in the crystal over a long distance. The Gaussian beam can not evolve into a stable soliton and its intensity decreases with propagation if temperature difference is large.