Chinese Optics Letters, 2009, 7 (4): 04271, Published Online: Apr. 27, 2009  

Efficient above-band-gap light emission in germanium Download: 689次

Author Affiliations
Department of Materials Science and Engineering, Microphotonics Center, Massachusetts Institute of Technology, Cambridge, MA 02139, USAE-mail: jfliu01@mit.edu
Abstract
We report an above-band-gap radiative transition in the photoluminescence spectra of single crystalline Ge in the temperature range of 20~296 K. The temperature-independence of the peak position at ~0.74 eV is remarkably different from the behavior of direct and indirect gap transitions in Ge. This transition is observed in n-type, p-type, and intrinsic single crystal Ge alike, and its intensity decreases with the increase of temperature with a small activation energy of 56 meV. Some aspects of the transition are analogous to III-V semiconductors with dilute nitrogen doping, which suggests that the origin could be related to an isoelectronic defect.

Jifeng Liu, Xiaochen Sun, Yu Bai, Kenneth E., Eugene A., Lionel C., Jurgen Michel. Efficient above-band-gap light emission in germanium[J]. Chinese Optics Letters, 2009, 7(4): 04271.

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