采用摩尔分数为7%的Y2O3掺杂的ZrO2混合烧结料为原料, 在不同的氧分压和沉积速率下用电子束蒸发方法沉积氧化钇稳定氧化锆(YSZ)薄膜样品。利用ZYGO Mark Ⅲ-GPI数字波面干涉仪对YSZ薄膜的残余应力进行了研究, 讨论了氧分压和沉积速率等工艺参量对残余应力的影响。实验结果表明,不同氧分压和沉积速率下, YSZ薄膜的残余应力均为张应力; 应力值随氧分压的升高先增大后减小, 随沉积速率的增加单调增加。热应力对薄膜所呈现的张应力性质起着决定性作用, 同时应力值的大小受本征应力和附加应力的影响。通过对样品的X射线衍射(XRD)测试, 结合薄膜微结构的变化, 对应力的形成原因进行了解释。

Yttria-stabilized zirconia (YSZ) films have been prepared by electron beam evaporation at different oxygen partial pressures and deposition rates, using the starting material made of 7% (mol fraction) Y2O3 (99.99%) mixed with ZrO2 (99.99%) powder. The residual stress of YSZ films was measured by viewing the substrate deflection using an optical interference method. The influences of oxygen partial pressures and deposition rates on residual stress were studied. The results show that residual stress of all the samples is tensile. The value of stress decreases with the increase of oxygen partial pressure, then increases with the further increase of oxygen pressure, and increases monotonously with deposition rate increase. The thermal stress plays an important role in the total stress. The value of residual stress is influenced by variations of intrinsic stress and extrinsic stress. In addition, the microstructure of the YSZ films was characterized by X-ray diffraction (XRD). The causes of residual stress were given with micro-structure changes.