利用飞秒激光的抽运探测技术，研究了单脉冲飞秒激光作用下GeSb2Te4相变薄膜的非晶化过程，测量了相变薄膜的时间分辨光学显微图。所研究的系统为多层薄膜结构100 nm ZnS-SiO2/ 35 nm GeSb2Te4 /120 nm ZnS-SiO2/0.6 mm ，飞秒激光的脉冲宽度为108 fs，波长为800 nm。实验发现相变薄膜从晶态至非晶态的相转变过程可以在 2.6 ns内完成。讨论了相变薄膜的厚度对系统的热传递、快速凝固过程的影响，分析了相关热过程和热效应，解释了抽运探测实验数据，并探讨了单脉冲飞秒激光诱导相变薄膜非晶化的机制。

The dynamics and the conditions of amorphous transitions induced in a GeSb2Te4 system upon a single 108 fs pulse melting were studied by real-time optical microscope measurements. The system has a multilayer structure of 100 nm ZnS-SiO2/35 nm GeSb2Te4 /120 nm ZnS–SiO2/0.6 mm polycarbonate substrate. The amorphization is completed within 2.6 ns. The thickness of the phase change layer plays an important role in controlling the heat flow conditions in the system upon a fs pulse irradiation. The relative thermal process and effects are analyzed. The mechanism of crystalline to amorphous transition triggered by single femtosecond laser pulses is discussed.