中国激光, 2009, 36 (6): 1356, 网络出版: 2009-06-08
大功率980 nm InGaAs/InGaAsP/InGaP激光器热特性
Thermal Property of High Power 980 nm InGaAs/InGaAsP/InGaP Laser Diodes
激光器 大功率激光器 热特性 无铝 特征温度 lasers high power laser thermal characteristics Al-free characteristic temperature
摘要
利用低压金属有机化学气相沉积(LP-MOCVD)生长了无铝980 nm InGaAs/InGaAsP/InGaP单量子阱(SQW)激光器, 测试了含铝的InGaAs/GaAs/AlGaAs和无铝的InGaAs/InGaAsP/InGaP两种不同材料的980 nm InGaAs SQW激光器在30~70 ℃范围内的P-I-V特性曲线, 对比分析了两种材料系980 nm激光器输出光功率、阈值电流、斜率效率和激射波长随温度的变化, 并对InGaAs/InGaAsP/InGaP激光器进行了可靠性实验。
Abstract
An aluminum-free InGaAs/InGaAsP/InGaP single quantum well (SQW) laser diode (LD) is grown by low-pressure MOCVD. The P-I-V characteristics of Al-free and Al-containing 980-nm InGaAs lasers are tested in temperature range of 30-70 ℃. The variations with temperature of the two different LDs’ characteristic parameters, including output power, threshold current, slope efficiency, and the wavelength, are analyzed contrastively. The reliability experiments on the InGaAs/InGaAsP/InGaP laser diodes are also carried out.
裘利平, 郭伟玲, 罗丹, 崔碧峰, 张蕾, 沈光地. 大功率980 nm InGaAs/InGaAsP/InGaP激光器热特性[J]. 中国激光, 2009, 36(6): 1356. Qiu Liping, Guo Weiling, Luo Dan, Cui Bifeng, Zhang Lei, Shen Guangdi. Thermal Property of High Power 980 nm InGaAs/InGaAsP/InGaP Laser Diodes[J]. Chinese Journal of Lasers, 2009, 36(6): 1356.