Chinese Optics Letters, 2009, 7 (6): 06489, Published Online: Jun. 8, 2009
MOCVD growth of AlGaInP/GaInP quantum well laser diode with asymmetric cladding structure for high power applications 
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量子阱激光器 非对称限制结构 金属有机气相沉积 140.2020 Diode lasers 140.5960 Semiconductor lasers 230.5590 Quantum-well, -wire and -dot devices
Abstract
In order to improve the characteristics of the general broad-waveguide 808-nm semiconductor laser diode (LD), we design a new type quantum well LD with an asymmetric cladding structure. The structure is grown by metal organic chemical vapor deposition (MOCVD). For the devices with 100-\mum-wide stripe and 1000-\mum-long cavity under continuous-wave (CW) operation condition, the typical threshold current is 190 mA, the slope efficiency is 1.31 W/A, the wall-plug efficiency reaches 63%, and the maximum output power reaches higher than 7 W. And the internal absorption value decreases to 1.5 cm^{-1}.
Peixu Li, Ling Wang, Shuqiang Li, Wei Xia, Xin Zhang, Qingmin Tang, Zhongxiang Ren, Xiangang Xu. MOCVD growth of AlGaInP/GaInP quantum well laser diode with asymmetric cladding structure for high power applications[J]. Chinese Optics Letters, 2009, 7(6): 06489.
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