报道了一种具有新型排列方式的垂直腔面发射半导体激光器(VCSEL)阵列。通过调制阵列中各单元直径以及单元间距,得到1 kW/cm2的高功率密度和高斯远场分布,且在工作电流0～6 A内远场发散角均小于20°。阵列由直径分别为200 μm,150 μm和100 μm成中心对称分布的5个单元组成,单元圆心间距分别为250 μm和200 μm。在室温连续工作条件下,阵列在注入电流4 A时达最大输出功率880 mW,斜率效率为0.3 W/A, 具有0.56 A的低阈值电流, 微分电阻0.09 Ω。与具有相同出光面积的4×4二维阵列相比, 这种新型阵列在出光功率、阈值电流、光谱特性及远场分布等方面均具有优越性。模拟了阵列各单元叠加后的近场远场光强分布,结果表明得到的新型阵列的远场分布与实验结果吻合较好。

Vertical cavity surface emitting laser (VCSEL) array with a novel arrangement is reported. By the modulation of the arrangement of operture size and the center spacing of the units, we obtain high power density up to 1 kW/cm2 and good beam property of Gaussian far-field distribution. The divergence angle is below 20° in the range of operating current from 0 A to 6 A. This array is composed of 5 symmetrically-arranged elements of 200 μm,150 μm and 100 μm-diameter, with the center spacing of 250 μm and 200 μm respectively. The maximum power is 880 mW at a current of 4 A with the wall-plug efficiency of 0.3 W/A. The differential resistance is 0.09 Ω with a threshold of 0.56 A. By the comparison between the novel array and the 4×4 two-dimensional array with the same total lasing area, we can conclude that the novel array is better in the property of output power, threshold current, lasing spectra, far-field distribution etc. The theoretical simulation of the near-field and far-field distribution is in good agreement with the experimental results.