从理论上设计并研制了一种用于可重构光分插复用技术中的具有多波长处理功能的单片集成光探测器阵列，器件在GaAs基衬底上集成了GaAs/AlGaAs材料的法布里-珀罗谐振腔和InP-In_0.53Ga_0.47As-InP 材料的PIN光探测器。为了能够实现对多路波长的探测，首先利用湿法腐蚀，改变不同区域谐振腔的厚度，然后通过二次外延完成谐振腔的生长，最后利用低温缓冲层技术在GaAs材料上异质外延高质量的InP基的PIN结构。器件的工作波长位于1500 nm左右，可实现对4路波长，间隔为10 nm的光信号探测，光谱响应线宽低于0.8 nm，峰值量子效率达到12％以上，响应速率达到8.2 GHz。实验测试结果与理论分析进行了对比, 并得到了很好的解释。

A wavelength selective monolithically integrated photodetector array is fabricated and characterized, which can be used for reconfigurable optical add-drop multiplexers. The integrated device consists of GaAs/AlGaAs Fabry-Pérot resonant cavities and InP-In_0.53Ga_0.47 As-InP PIN photodetectors on the GaAs substrate. In order to achieve multiple channel routing detection, the thickness of GaAs-based resonant cavity is varied by wet etching, and then regrowth of the resonant cavities are accomplished by using the second epitaxy. High-quality heteroepitaxy is realized by employing a thin low-temperature buffer layer. The device is operated at a wavelength around 1500 nm for four channels with 10 nm interval. A spectral linewidth smaller than 0.8 nm, an external quantum efficiency of about 12%, and response rate of 8.2 GHz are simultaneously obtained in the device. The experiment result exhibits good agreement with the calculation.