首页 > 论文 > 光学学报 > 29卷 > 9期(pp:2520-2523)

极紫外投影光刻物镜设计

Design of Extreme Ultraviolet Lithographic Objectives

  • 摘要
  • 论文信息
  • 参考文献
  • 被引情况
  • PDF全文
分享:

摘要

极紫外投影光刻用14 nm波长的电磁辐射,可以在实现高分辨率的同时保持相对较大的焦深,有希望成为制造超大规模集成电路的下一代光刻技术。极紫外投影光刻工作于步进扫描方式,采用全反射、无遮拦、缩小的环形视场投影系统。无遮拦投影系统的初始结构设计困难且重要。介绍了一种近轴搜索方法,该方法引入了像方远心、物方准远心、固定放大率、Petzval 条件和物像共轭关系等约束,通过计算确定第一面反射镜、最后一面反射镜、光阑所在反射镜的曲率,以及物距和像距。编写了近轴搜索程序,搜索出初始结构。从初始结构出发,优化得到两套物镜,一套由四反射镜组成的系统,数值孔径0.1,像方视场26 mm×1 mm,畸变10 nm,分辨率优于6000 cycle/mm。一套系统由六反射镜组成,数值孔径0.25,像方视场26 mm×1 mm,畸变3 nm,分辨率优于18000 cycle/mm。

Abstract

Using radiation with a wavelength of 14 nm, Extreme ultraviolet lithography (EUVL) can reach a high resolution and remain relative large depth of focus, and it is a promising future-generation lithographic technique for manufacturing VLSI. EUVL operates in step-and-scan mode, and utilize all-reflective unobstructed reduction ring-field projection system. The starting configurations designing of unobstructed projection system is a nontrivial and important issue. A paraxial search method is introduced, which imposes constraints, such as rigorous telecentricity on the image side, quasi-telecentricity on the object, fixed magnification, Petzval condition and conjugated object-image. Curvatures of first mirror and last mirror, object distance and image distance are all solved consequently. And curvature of a reflecting surface coinciding with stop surface is solved. Paraxial search program is developed and some starting configurations are found. Two objectives are designed by optimizing two starting configurations. One is composed of four mirrors with the NA of 0.1, image field of 26 mm×1 mm, distortion of 10 nm, and the resolution better than 6000 cycle/mm. The other objective is composed of six mirrors with the NA of 0.25, image field of 26 mm×1 mm, distortion of 3 nm, and the resolution better than 18000 cycle/mm.

Newport宣传-MKS新实验室计划
补充资料

中图分类号:O435.2

DOI:10.3788/aos20092909.2520

所属栏目:光学设计与制造

收稿日期:2008-11-30

修改稿日期:2008-12-23

网络出版日期:0001-01-01

作者单位    点击查看

杨雄:中国科学院光电技术研究所,四川 成都 610209
邢廷文:中国科学院光电技术研究所,四川 成都 610209

联系人作者:杨雄(opticsy@yahoo.com.cn)

备注:杨雄|主要从事光学系统设计、薄膜设计方面的研究|(1976-),男,博士后。

【1】Li Yanqiu. Optical performance of extreme-ultraviolet lithography for 50 nm generation[J]. Acta Optica Sinica, 2004, 24(7): 865-868
李艳秋. 50 nm分辨力极端紫外光刻物镜光学性能研究[J]. 光学学报, 2004, 24(7): 865-868

【2】Jin Chunshui, Ma Yueying, Pei Shu et al.. Development of elementary arrangement for exterme ultraviolet projection lithography[J]. Acta Optica Sinica, 2002, 22(7): 852-857
金春水,马月英,裴舒 等. 极紫外投影光刻原理装置的集成研究[J]. 光学学报, 2002, 22(7): 852-857

【3】Wang Liping, Jin Chunshui, Zhang Lichao. Two-mirror system design study of reduced proj ection optics for EUV lithography[J]. Opto-Electronic Engineering, 2007,34(12):113-117
王丽萍,金春水,张立超. 极紫外投影光刻两镜微缩投影系统的光学设计[J]. 光电工程,2007,34(12):113-117

【4】Scott A. Lerner, Jose M. Sasian, Michael R. Descour. Design approach and comparison of projection cameras for EUV lithography[J]. Opt. Eng., 2000,39(3):792-802

【5】Matthieu F.Bal, Florian Bociort, Joseph J.M.Braat. Analysis search and classification for reflective ring-field projection systems[J]. Appl. Opt.,2003,42(13):2301-2311

【6】Florian Bociort, Oana Marinescu. Designing lithographic objectives by constructing saddle points[C]. SPIE, 2006,6324, TuA3

【7】Hudyma, Russell M.. Reflective optical imaging systems with balanced distortion[P]. US Patent, 2001, 6226346

您的浏览器不支持PDF插件,请使用最新的(Chrome/Fire Fox等)浏览器.或者您还可以点击此处下载该论文PDF