研究5和2 MeV质子对法布里-珀罗(FP)腔结构及分布反馈(DFB)结构的多量子阱激光二极管的辐射效应,结果显示:在5×1012～5×1013 cm-2质子注量范围内,随着注量的增大,激光二极管阈值电流逐渐增大,电流-电压特性的低压区电流渐渐增大。由60Coγ总剂量实验结果推断:质子对实验器件的损伤源于质子位移效应。采用Trim程序的模拟结果表明:在2 MeV质子射程以内,2 MeV质子要比5 MeV质子产生的空位数多。这使得相同辐照注量下,2 MeV质子要比5 MeV质子导致的阈值电流增大更多,损伤更为严重。激光二极管辐射损伤存在着正向偏置退火效应,FP和DFB结构的二极管具有相似的加电退火规律,均可拟合成指数衰减形式,退火曲线可以分成退火常数不同的几段进行拟合。正向偏置退火效应使得辐照期间,处于加电状态的激光二极管比处于短路状态的激光二极管退化程度有所减弱。

The effects of 5 MeV and 2 MeV proton irradiations on multi-quantum-well laser diodes with Fabry-Perot cavity and distributed feedback are investigated.It is found that the threshold current and total current at low voltage range of current-voltage characteristics curves increase gradually at the fluence level from 5×1012 cm-2 to 5×1013 cm-2.The damage mechanism is attributed to the displacement effect of protons with the help of 60Coγ total dose experiment.Trim program simulation shows that the number of vacancies induced by 2 MeV protons is more than that induced by 5 MeV protons and so does the threshold current.Due to forward-bias-induced annealing effects,the laser diode biased during irradiation is less degraded than that short-circuited,and annealing curves can be fitted sectionally with different annealing rates.