强激光与粒子束, 2009, 21 (10): 1539, 网络出版: 2009-12-02   

γ脉宽对电子器件瞬时辐照效应的影响

Pulse-width dependent radiation effects on electronic components
作者单位
中国工程物理研究院 电子工程研究所,四川 绵阳 621900
摘要
采用了2种γ脉冲辐射源,在脉冲宽度分别约为20,50,150 ns,剂量率为106~109 Gy(Si)·s-1下,对5种不同类型的电子器件进行了辐照试验并对其辐照响应进行了分析,比较了不同脉冲宽度条件下辐照响应的差异。实验结果表明:脉冲宽度是影响瞬时辐照效应的重要因素,γ脉冲宽度越宽,辐照响应越强,分离器件比集成电路受脉宽的影响更明显。
Abstract
Mechanism of pulse-width effects on electronic components is described.The relationship of pulse-width and radiation response is presented.Five types of devices are tested under three different pulse-widths(about 20 ns,50 ns,150 ns) of different simulative radiation sources,the dose rate is about 106 to 109 Gy(Si)/s.The experiment results are analysed and discussed.The differences of radiation response under different pulse-widths are compared.It is shown that radiation effects are strongly influenced by pulse-width.Under the same radiation dose rate,longer γ pulse-width brings longer radiation storage time and stronger radiation response to devices.Discrete device is more obviously influenced by pulse-width than integrated circuit.

朱小锋, 赵洪超, 周开明. γ脉宽对电子器件瞬时辐照效应的影响[J]. 强激光与粒子束, 2009, 21(10): 1539. Zhu Xiaofeng, Zhao Hongchao, Zhou Kaiming. Pulse-width dependent radiation effects on electronic components[J]. High Power Laser and Particle Beams, 2009, 21(10): 1539.

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