介绍了利用激光制备多晶硅表面织构的研究结果。采用激光在硅片表面刻蚀，然后利用化学方法去除残渣和损伤，制得均匀的表面陷光结构。通过扫描电子显微镜，Hitachi U-4100分光光度计和Semilab WT2000少子寿命仪分析了表面织构化后硅片的表面形貌、反射率和少子寿命。通过调节激光和化学腐蚀参数得到很好的陷光效果，表面反射率最低可以降到约10%。但是激光刻蚀对硅片性能仍有一定损伤，有待改进。激光表面织构为多晶硅的减反射处理提供有效的途径。

Surface texturation of multicrystalline using laser etching is studied. Symmetrical microstructure for light trapping was made by using laser etching followed by chemical post-processing. The surface morphology, reflection rate and life time of minority carrier in multicrystalline silicon wafer were measured and analyzed. The lowest reflection of the processed silicon surface can be reduced to about 10%. There are unsolved problems, such as laser-induced damage and long processing time, but this technology has provided an efficient way to improve performance of multicrystalline solar cell.