作为制备光电子器件例如紫外光子探测器、异质结场效应晶体管(HFET)、高电子迁移率晶体管(HEMT)异质结场效应管等的一种宽禁带半导体材料， III-V 族氮化物AlGaN器件近年来颇受关注.AlGaN与金属之间的低阻欧姆接触的实现问题阻碍了AlGaN(基)器件的发展.通过对相关文献的归纳分析，介绍了近年来AlGaN器件在欧姆接触形成、金属化方案、合金化工艺及表面处理等方面的研究进展.

The III-V nitrides AlGaN has received a lot of attention recently as one of the important wide band gap semiconductor materials for fabricating optoelectronic components such as ultraviolet photodetectors, heterostructure field effect transistors, and high electron mobility transistors. But difficulties in realizing low-resistance ohmic contacts between metals and AlGaN have blocked their developments. By summering and analyzing the related papers published in recent years, the developments of ohmic contact formation, metallization scheme, alloying process and surface treatments for various AlGaN devices are presented.