由于硅与玻璃阳极键合需要在相对较高的温度下进行，因此材料之间会因热膨胀系数失配而产生较大的热应力，该应力对压力传感器的性能影响较大。对采用单晶硅横膈膜作为敏感膜与玻璃环阳极键合形成压力参考腔的封装，用有限元方法对硅玻璃环键合后因温度变化所产生的应力分布进行了系统仿真分析，并采用泰曼-格林干涉仪对键合后硅片的变形进行测量。测量结果显示硅膜的挠度为283 nm，测量结果与仿真结果基本一致。

Anodic bonding is a common method used in Si-glass devices because of the large bonding strength and simple process. A higher temperature and different coefficient of thermal expansion result in large residual stress in common Si and glass anodic bonding. The residual stress will have a great impact on the performance of the pressure sensors. In order to reduce the influence of residual stress to device characteristics, the residual stress of Si and glass ring anodic bonding are analysized by using finite element method. In the experiment, a Twyman-Green interferometer is used to measure silicon surface deformation after anodic bonding. The measurement shows that the silicon membrane has the 283 nm flexure.