为了研究超短脉冲激光辐照下半导体材料的热力效应，在热电子崩力和自洽场两种模型的基础上，得到了完全耦合的非线性热弹方程组。在单轴应力条件下，采用有限差分法，讨论了不同脉宽的超短脉冲激光辐照下，硅膜内载流子温度、晶格温度、热应力以及热电子崩力随时间及膜深度的变化情况。结果表明,脉冲宽度对硅膜的热力损伤过程起重要作用。能量密度一定时，载流子和晶格达到热平衡所需时间随脉冲宽度的增加而增加；热电子崩力呈现明显的双峰结构，同时脉冲宽度对第二个峰值的影响较大；脉宽越窄，热应力的峰值越大，越容易对材料造成损伤，为激光加工和光电器件的损伤提供了理论参考。

To research thermal-mechanical effect of semiconductors subjected to ultrashort laser heating, a set of fully coupled thermoelasticity equations is derived based on the hot-electron blast and complete self-consistent models. With the assumption of uniaxial stress, numerical analysis is performed for a thin silicon film heated by different laser pulses using a finite difference method. The results, including the carrier and lattice temperature, hot-electron blast force and thermal stress, indicate pulse width plays an important role in the damage of silicon film. With the same value of the laser energy , the time which the carrier and lattice need to establish the thermal equilibrium is longer with the pulse increasing. The pulse width has a great influence on the second peak value of the hot-electron blast force which has a two-peak structure. The narrower the pulse is, the greater the peak value of thermal stress is, and the damage to materials is more easy, which provides a theoretical reference for laser processing and the damage of optoelectronics.