在Si、Ge红外窗口上利用离子辅助电子束蒸发技术和RF-PECVD技术制备了具有高透过率的AR/DLC保护薄膜，并与单层DLC保护薄膜的光学性能进行了对比。所制备的高透过率保护薄膜达到如下性能：在3~5 μm波段，Si基底上一面镀高效红外增透膜一面镀AR/DLC增强型保护薄膜的平均透过率达到约96%,较之镀DLC膜平均透过率提高了约4%。在8~12 μm波段，Ge基底上一面镀高效红外增透膜一面镀AR/DLC增强型保护薄膜的平均透过率达到约95%,较之镀DLC膜平均透过率提高了约5%。有关薄膜样品都通过了相应的环境试验。

AR/DLC protective coatings were deposited on Si and Ge windows using ion beam assisted electron beam evaporation and RF-PECVD(Radio Frequency-Plasma Enhanced Chemical Vapor Deposition), and the transmittance of deposited coatings were compared with single layer DLC. The transmittance of double side coated Si substrate(one side with high performance IR anti-reflection coatings and the other side with AR/DLC coatings) in 3~5 μm can reach 96%, which is increased about 4% compared with just coated single layer DLC samples. The transmittance of double side coated Ge substrate(one side with high performance IR anti-reflection coatings and the other side with AR/DLC coatings) in 8~12 μm can reach 95%, which is increased about 5% compared with just coated single layer DLC samples.