利用射频磁控溅射在石英衬底上生长出铟磷共掺氧化锌薄膜(ZnO∶In,P)，所用靶材为掺杂五氧化二磷(P2O5)和氧化铟(In2O3)的氧化锌(ZnO)陶瓷靶,掺杂质量分数分别为1.5%和0.3%，溅射气体为Ar和O2的混合气体。原生ZnO薄膜是绝缘的， 600 ℃退火5 min后导电类型为n型，而800 ℃退火5 min后为p型。p型ZnO薄膜的电阻率、载流子浓度和霍尔迁移率分别为12.4 Ω·cm, 1.6×1017 cm-3 和3.29 cm2·V-1·s-1。X射线衍射测量结果表明所有样品都只有(002)衍射峰，并与相同条件下生长的未掺杂ZnO相比向大角度方向偏移，意味着In和P都占据Zn位。XPS测试结果表明在共掺ZnO薄膜中P不是取代O而是取代Zn。因此，铟磷共掺ZnO薄膜中，In和P都取代Zn，并且PZn与2个锌空位(VZn)形成PZn-2VZn复合受主，薄膜表现为p型。

In，P codoped ZnO ［ZnO∶(In,P)］ films were grown on quartz by radio frequency magnetron sputtering, the ZnO target was mixed with 1.5% P2O5 and 0.3% In2O3，and the mixing gas of Ar and O2 was used as the sputtering gas. The as-grown ZnO∶(In,P) film shows insulating conduction, but n-type conductivity after annealing at 600 ℃ for 5 min, and p-type conduction after annealing at 800 ℃ for 5 min. The p-type ZnO:(In,P) has a resistivity of 12.4 Ω·cm, a carrier concentrativity of 1.6×1017 cm-3 and a Hall mobility of 3.29 cm2·V-1·s-1 .XRD mea-surement indicates that both the as-grown and annealed ZnO∶(In,P) films have a preferred (002) orientation and larger (002) diffraction angles than that of undoped ZnO prepared at the same conditions, implying that both In and P occupy Zn site in the ZnO∶(In,P). The XPS result confirm that the P substitutes Zn site (PZn) but not O site in the ZnO∶(In,P). Therefore, it was suggested that both In and P substitute at Zn sites in the ZnO∶(In,P) and the PZn combines with two Zn vacancies(VZn) to form a PZn-2VZn acceptor complex, which is responsible to p-type conductivity of the ZnO∶(In,P).