采用强激光辐照硅锗合金，然后高温氧化的方法，在样品表面生成微米级小孔，用高精度扫描电镜观察孔内结构，发现片状纳米结构的存在。用荧光光谱仪测量其光致荧光谱，对于激光辐照(无高温氧化)的样品，在峰值705 nm处出现较强的光致发光(PL)。高温氧化后，样品在606 nm处出现一尖锐的PL光谱。利用量子受限和纳晶与氧化物的界面态综合模型解释PL光谱的产生。

A kind of low-dimensional structure on SiGe alloy film can be formed by laser irradiation (75 W power and 1 064 nm wavelength) and high temperature oxidation, and the low-dimensional structure can emit intense photoluminescence (PL). A emission model of three-level system in the interface between SiO2 and Ge crystal cluster is proposed for interpreting the PL peaks at 705 nm and 606 nm. The results in this article indicated that the band gap of Ge nanocrystals opens by quantum confinement. The emission energy increases with decreasing sizes, distributing the band PL spectra. A sharp PL emission takes place at 606 nm, which is independent of size. In this process, the photo-excitation occurs in germanium nanocrystal while the photo-emission occurs in oxide interface. It is demonstrated that population inversion between the top state of the valence band and the trap state in the nanocrystal-oxide interlayer is possible.