制作了结构为ITO/2T-NATA (20 nm)/NPB(60 nm)/Zn(BTZ)2∶Ir(DBQ)2(acac) (80 nm)/Alq3(70 nm)/LiF(1 nm)/Al(200 nm)的红光器件，其中2T-NATA是4,4′,4″-tris(N-(2-naphthyl)-N-phenyl-amino)-triphenylamine，NPB是N,N′-di(naphthalen-1-yl)-N,N′-diphenyl-benzidine， Zn(BTZ)2是Bis-(2-(2-hydroxyphenyl) benzothiazole)zinc，Ir(DBQ)2(acac)是iridium complex，Alq3 是tris(8-hydroxyquinolato)aluminum。基于Ir(DBQ)2(acac) 掺杂的Zn(BTZ)2体系的器件给出最高电致发光(ＥＬ)性能。结果显示：１0％Ir(DBQ)2-(acac) 掺杂Zn(BTZ)2器件的亮度和效率分别为25 000 cd/m2和12 cd/A,其相应的EL峰位于620 nm,色坐标(x=0.63，y=0.37)。由于未使用激子阻挡层，所以，比通常磷光器件的制作工艺简单并且操作过程容易控制。

Full color display is the goal of organic light-emitting diodes (OLED), but the fabrication of stable red devices is the great barrier in the mass production of OLED.In order to use organic light-emitting diodes in displays,it is very important to obtain red light emitting with high efficiency.In this paper, a red phosphorescent material is doped into different host materials by a structure of ITO /CuPc(20 nm)/NPB(60 nm)/Zn(BTZ)2∶Ir(DBQ)2(acac) (80 nm)/Alq3(70 nm)/LiF(1 nm)/Al (200 nm).It was found that the device can achieve a brightness of 25 000 cd/m2, a current efficiency of 12 cd/A and the colour coordinates of (x=0.63，y=0.37). Because there is no hole blocking layer, the device producing process would be simple.