在550 ℃下，采用化学气相沉积(CVD)法在镀Au(10 nm)的Si(100)衬底上，制备了ZnO一维纳米钉阵列结构。X射线衍射(XRD)谱图中只显示了(002)衍射峰，其半峰全宽为0.166°，表明制备的纳米钉阵列具有高度c轴择优生长取向的特点和较高的结晶质量，高分辨透射电子显微镜(HRTEM)和选区电子衍射图(SAED)谱的结果表明所得到的单根纳米钉为沿(002)生长的单晶结构；同时，对一维纳米钉阵列的生长机理进行了分析。结果表明：由于Si与ZnO之间大的晶格失配度，首先在Si表面沉积一层富Zn的ZnOx薄膜缓冲层，然后通过VLS机理中的底端生长模式生长成为纳米钉阵列结构。

Well-aligned ZnO nanonails were synthesized on Au coated Si(100) substrates via chemical vapor deposition(CVD) method at 550 ℃. The presence of only (002) diffraction peak and its corresponding FWHM of 0.166° in the XRD patterns indicated that the ZnO nanonails exhibited (002) preferred orientation and good crystal quality. HRTEM and SAED results showed that the ZnO nanonails are single-crystal. Growth mechanism of the ZnO nanonails was also presented. The results showed that due to the large lattice mismatch between ZnO and Si, ZnOx buffer layer is firstly deposited on Si substrate, and then ZnO nanonails are grown perpendicularly on the substrate by VLS mechanism.