中国激光, 2010, 37 (1): 92, 网络出版: 2010-01-16   

大功率半导体激光器阵列光谱展宽机理研究

Study of the Mechanisms of Spectral Broadening in High Power Semiconductor Laser Arrays
作者单位
1 中国科学院西安光学精密机械研究所 瞬态光学与光子技术国家重点实验室,陕西 西安 710119
2 天津大学 化工学院,天津 300072
3 西安炬光科技有限公司,陕西 西安 710119
摘要
中国科学院“计划”资助课题。
Abstract
High power semiconductor laser arrays have found increasing applications in pumping of solid state laser systems. Spectral width is one of the key factors of laser array products. Increasing the spectral accuracy by reducing the spectral width of the pump diode can improve the laser system compactness,efficiency,power,and beam quality while reducing thermal management cost in the system. The mechanisms of spectral broadening in high power semiconductor laser arrays are studied for the first time by numerical simulation and by means of spatial spectral mapping and scan acoustic microscope(SAM). The broadening of a laser spectrum is often the result of the appearance of a shoulder/tail on either or both sides of the spectrum or sometimes a double-peak or even multiple peaks occurs. It is concluded that the shoulder/tail appeared on the longer-wavelength side of the spectrum is normally caused by thermal effect while the shoulder/tail on the shorter-wavelength side of the spectrum is usually the result of thermal-stress built in the laser array. Based on the mechanism of spectral broadening in high power semiconductor laser arrays,the strategy of controlling spectral broadening is presented in this paper.

王警卫, 袁振邦, 张彦鑫, 吴迪, 陈旭, 刘兴胜. 大功率半导体激光器阵列光谱展宽机理研究[J]. 中国激光, 2010, 37(1): 92. Wang Jingwei, Yuan Zhenbang, Zhang Yanxin, Wu Di, Chen Xu, Liu Xingsheng. Study of the Mechanisms of Spectral Broadening in High Power Semiconductor Laser Arrays[J]. Chinese Journal of Lasers, 2010, 37(1): 92.

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