用脉冲激光沉积法在相同孔隙率的多孔硅(Porous Silicon,PS)衬底上生长了ZnS薄膜和ZnO薄膜,在室温下对ZnS/PS和ZnO/PS的光学和电学性质进行了比较。结果发现,ZnS/PS和ZnO/PS在可见光区450～700 nm都有一个较宽的光致发光谱带,呈现较强的白光发射,但ZnS/PS体系的白光发射性能要优于ZnO/PS体系的发光性能。从二者的I-V特性曲线来看,ZnS/PS异质结呈现出与普通二极管相似的整流特性,而ZnO/PS异质结的整流特性与普通二极管不同,其反向电流不饱和。

ZnS films and ZnO films were prepared on porous silicon (PS) substrates with same porosity by pulsed laser deposition (PLD),and the optical and electrical properties of ZnS/PS and ZnO/PS systems were compared at room temperature.The results showed that,there was a broad photoluminescence band from 450 nm to 700 nm in the visible region of both ZnS/PS and ZnO/PS composites,exhibiting intensive white light emission.However,the white light emission performance of ZnS/PS composite was better than that of ZnO/PS composite.Based on the I-V characteristics,ZnS/PS heterojunction exhibited the rectifying junction behavior,but the I-V characteristic of the ZnO/PS heterostructure was different from that of the common diode,whose reverse current was not saturated.