透明非晶态氧化物半导体薄膜晶体管(TAOS-TFT)以其诸多优势受到研究人员的青睐,最近几年发展迅速。文章以传统薄膜晶体管做对照,详细介绍了TAOS-TFT的原理、结构和性能,总结出TAOS-TFT相对于Si基TFT具有制备温度低、均一性好、迁移率高、对可见光全透明和阈值电压低等5方面的优势,指出了TAOS-TFT在进一步实用化过程中所面临的几个重要问题,其中最为重要的是需要尽快建立自身的集约化物理模型。

Transparent amorphous oxide semiconductor thin film transistor (TAOS-TFT) are attracting interest for its several advantages for applications in the new generation display technology. Especially in recent years it develops rapidly. In this paper,five major advantages about TAOS-TFT are elaborated in detail by means of the contrast of traditional thin film transistors.For example,the low tempe-rature of fabrication,good homogeneity,the high mobility,the full transparency to visible light,the good performance of combination property of devices. Several crucial problems are also indicated about TAOS-TFT,such as,the in-depth study of metals component in mixed-oxide films,the further study of the influence of external environment (including bending stress,temperature,humidity,etc.) upon performance of the device,the further optimization for the preparation of the device,developing compact model with its own characteristics,and the requirements of the development and utilization of the metal element with a low crustal abundance.