液晶与显示, 2009, 24 (3): 367, 网络出版: 2010-01-22
ZnO薄膜离子注入改性的研究进展
Progress in Ion Beam Modification of ZnO Thin Films
摘要
ZnO是一种在短波长光电器件领域有巨大应用价值的Ⅱ-Ⅵ族化合物半导体材料,离子注入是常用的半导体掺杂技术,文章综述了国内外近年来离子注入技术在ZnO的n、p型掺杂等方面的研究进展。
Abstract
Zinc oxide (ZnO),an important Ⅱ-Ⅵ semiconductor,has potential applications in short wavelength optoelectronics.Ion implantation is a conventional technique widely used in semiconductor industry.This paper summarized the developments and applications of ion implantation in fabrication of n- or p-type ZnO,etc.
薛书文, 梅芳, 肖世发, 黄子康, 莫东. ZnO薄膜离子注入改性的研究进展[J]. 液晶与显示, 2009, 24(3): 367. 薛书文, 梅芳, 肖世发, 黄子康, 莫东. Progress in Ion Beam Modification of ZnO Thin Films[J]. Chinese Journal of Liquid Crystals and Displays, 2009, 24(3): 367.