采用MOCVD法在SiNx绝缘薄膜上生长了ZnO薄膜,通过X射线衍射与光致发光光谱表征了ZnO薄膜的质量。其结果是:XRD特征峰半高全宽0.176°,光致发光仅有381.1 nm的发光峰,展现了ZnO薄膜光电特性的优势。制备了底栅型ZnO 薄膜晶体管,测试表明器件具有明显的场效应特性及饱和特性。

ZnO films were grown on SiNx/glass substrate by the method of MOCVD.The qualities of the ZnO films were characterized by XRD and photo luminescence spectra.The results indicated that the full width at half height of XRD intrinsic peak is 0.176°,and there is only a peak at 381.1 nm in the PL spectra.Both results exhibit the preponderance of our ZnO films in their photoelectricity characteristics.A bottom-gate-type ZnO-TFT was constructed successfully,and the measurements show that the device has an obvious field effect performance and a favorable saturation characteristic.