投影曝光工艺是集成电路制造过程中的关键环节，ArF光刻投影曝光作为实现100～32 nm特征尺寸微细加工的首选技术，其中光刻物镜的光学性能是实现高分辨率的关键。介绍了利用光学设计软件Code V设计全折射干式投影光刻系统的过程、难点与创新。该系统应用28块球面镜，数值孔径达到0.75，在分辨率增强技术的辅助下可以实现90 nm分辨率光刻，成像面积为26 mm×10.5 mm，放大倍率-0.25，采用双远心结构以减少工作平台调平对焦不准所引入的误差。光学分析结果表明，系统在全视场范围内最大畸变为0.005 nm，最大波像差0.015λ(均方根值)，该投影曝光光学系统基本满足现阶段光刻机的性能要求。

Lithographic exposure is the key processing in the manufacture of integrated circuit. 193 nm wavelength lithography is one of the promising technologies for the fabrication of critical dimension of 100～32 nm. The optical performance of projection lens is one of the most important factors to realize the fabrication of high resolution pattern. This paper presents the design process for lithography projection lens by optical software code V. 28 spheric lenses were used in this system. Numerical aperture can reach 0.75. With the assistance of resolution enhancement technology, image resolution reaches 90 nm. Exposure area is 26 mm×10.5 mm and the reduction ratio is 0.25. The optical evaluation of optics was completed at full exposure area. The maximum distortion of 0.005 nm and the maximum wavefront aberation of 0.015λ(root mean square) can be reached. This projection lens can basically meet the requirements for lithographic equipments nowadays.