测试了半导体激光器阵列的横向波长分布。结果表明,多数阵列的波长分布出现了V型的“凹陷”。这一分布与器件工作温升引起的横向波长分布相反,根据半导体禁带宽度与应变关系的基本理论,说明这一波长分布反映了键合应力的状态。通过对键合应力产生机理的初步分析,提出了线性应力分布模型,很好地解释了现有的实验数据。实验和分析表明,激光器阵列横向波长分布的测量是键合应力探测的一个有用手段。

The wavelength lateral distribution of high-power laser diode arrays (LDA) is tested. A V-type wavelength distribution is measured typically in the tested LDA. The measurements are carried under different driving currents,indicating that the thermal induced wavelength distribution is in protuberant shape and is opposite to the V-type. Based on the relation between stress and band-gap energy,it is show that the V-type stress distribution in LDA indicates the stress distribution in the laser chip. A linear stress distribution model is proposed to explain the experimental results. This work demonstrates that the measurement of lateral wavelength distribution can provide a useful method to detect bonding stress.