中国激光, 2010, 37 (2): 385, 网络出版: 2010-02-03
GaN负电子亲和势光电阴极的激活工艺
Activation Technique of GaN Negative Electron Affinity Photocathode
光电子学 负电子亲和势(NEA)光电阴极 GaN光电阴极 激活工艺 紫外探测 Cs/O吸附 optoelectronics negative electron affinity photocathode GaN photocathode activation technique ultraviolet detection Cs/O adsorption
摘要
以金属有机化学气相沉积(MOCVD)外延的p型GaN为阴极发射层材料,通过对激活过程中阴极光电流的在线监测,考察了Cs激活,Cs/O交替激活以及高低温两步激活对GaN阴极光电发射性能的影响。实验结果表明,单用Cs激活就可制备出量子效率约为20％的GaN光电阴极,Cs激活后再进行2-3个Cs/O循环激活可小幅度提高量子效率,高低温两步激活不能进一步提高量子效率。利用偶极层表面模型对实验现象进行了解释。
Abstract
Metal organic chemistry vaporation deposition (MOCVD) epitaxial p-type GaN layer is used as emission material of GaN photocathode. By using on-line measurement of photocurrent in activation process,the influences of Cs activation,Cs/O alternate activation and high-low temperature two-step activation techniques on photoemission performance of GaN photocathode are investigated. The experimental results show that GaN photocathode can obtain about 20％ quantum efficiency only by Cs activation,and the quantum efficiency can be increased slightly by two or three Cs/O cycles. But the high-low two-step activation technique can not increase the quantum efficiency. The experimental phenomena are explained by the dipole surface model.
杜晓晴, 常本康, 钱芸生, 富容国, 高频, 乔建良. GaN负电子亲和势光电阴极的激活工艺[J]. 中国激光, 2010, 37(2): 385. Du Xiaoqing, Chang Benkang, Qian Yunsheng, Fu Rongguo, Gao Pin, Qiao Jianliang. Activation Technique of GaN Negative Electron Affinity Photocathode[J]. Chinese Journal of Lasers, 2010, 37(2): 385.
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